Sergio Celaschi www.vonbraunlabs.com.br

Sergio Celaschi www.vonbraunlabs.com.br ABINEE 15 de setembro de 2009

Mission To explore the universe creating opportunities on Earth.

Wernher von Braun Research Center Research Environment Wireless portable devices Lab Development Environment Wernher von Braun Center Machine Vision Lab

Wernher von Braun Research Center An environment for fostering innovation Wernher von Braun Center

Machine Vision AOI Automatic Optical Inspection

Machine Vision: Industry needs (CMs) Applying machine vision to PCB (printed circuit board) inspection. Inspection areas (by human or machines) The idea is that by inspecting the products one can infer the process quality and improve it. BACK-END Screen printer Chip shooter Fine pitch placement Reflow oven FRONT-END line

SMD inspection (front-end) Requirements Probe missing components to the size 0402 (1 mm X 500um); Inspect component misplacement and inverted diodes; Inspect solder paste for paste misaligment (with reference to stencil template) and measure solder paste volume (area and height) Inspection time ~ 60 seconds @ 25 micron/pixel Low false negative rates; Design and build a low cost (BOM less than USD30k) Easily NPI programing and operated machine

SMD component inspection @ wvb Labview (NI) driven solution Matlab driven solution

Machine vision challenges for SMD component inspection background paste silk pad Separate solder paste from component, pad, board silk and background Inspection is made by comparing test image and its reference (pattern matching) vb developed new pattern matching codes together with image alignement; Development of support vector machine codes for component inspection (statistical methods applied to machine learning)

SPI: Solder Paste Inspection Computer generated solder paste features (using ray tracing) 2D solder paste inspection

AOI-PTH Components

AOI-PTH Components Inspect misplacements in PTH (pin through hole) components on PCBs (printed circuit boards) of the type: DIMM connectors. 30% of backend failures are related to DIMM misplacement. Defects: partial DIMM insertion and folded pins. Component tilt resulting in lack of proper electric join PCB DIMM (Dual Inline Memory Module) connector

WvB: Inspection Interface

Machine Vision applied to ITS (Intelligent Transportation System) Development of a multi-lane free flow toll system in Brazil Vehicle classification is done by counting the number of axles No sensors installed on lanes; Correctly recognize lifted wheels and count long trucks (~30 meters), with ~9 axles Machine vision: Selected method for axle counting for 4/7 operation.

Automatic axle counting based on machine vision

RFID Radio Frequency Identification

Elementos Transponder ou Tag Pode ser passivo ou ativo Pode ter aplicações específicas ou gerais Leitor Estabelece comunicação para identificar o tag e disponibiliza a informação para outro elemento. Antenas Acoplam sinal elétrico do leitor ao espaço livre em forma de ondas eletromagnéticas ou vice versa.

Interação entre os elementos Tag recebe o sinal. A antena do tag converte sinal EM em tensões. Essa tensão alimenta a eletrônica do tag.

Interação entre os elementos Tag energizado, transmite informações para o leitor. (uplink)

Tag / Transponder Armazena dados EPC: Electronic Product Code Password de Kill e Acess Tag ID Usuário Von Braun desenvolve tags customizados especiais.

Leitor Portátil Intermec IP30 + Coletor de Dados Desenvolvido para aplicações industriais. Conectividade via WiFi, Bluetooth, WWAN (3G CDMA,EV-DO, GSM/EDGE). Mobilidade Leitor von Braun

Leitor Fixo Leitor von Braun, Sirit, Impinj, Alien, etc. Desenvolvidos para aplicações industriais. Conectividade via Ethernet, Porta serial, etc. Alto Desempenho, várias antenas por leitor.

Micro-eletrônica: Aplicações Redes de Sensores sem Fio Veículos Inteligentes, controle de sistemas, controles de navegação adaptativos; RFID, Bluetooth, UWB, WiMAX Identificação e reconhecimento de voz, identificação de digitais, cartões inteligentes, AVI Processamento em Redes Neurais, Criptografia e Segurança de Redes; Desenvolvimento e Aplicações em Telecomunicações Multiplexadores Ópticos SDH&PDH, Mapeadores e Processadores; MEMS, optical MENS, RF MEMS Desenvolvimento e arquitetura em microprocessadores; Conversores AD/DA Circuitos para gerenciamento.

Micro-eletrônica: Etapas de desenvolvimento Definição Sistemica ASIC, SoC e FPGA Desenvolvimento ASIC, SoC e FPGA Verificação - ASIC, SoC e FPGA Pre-Layout - ASIC and SoC Layout ASIC and SoC Prototipagem e testes

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VoIP VOIP solutions platform HW and SW design and implementation. Voice Codecs G.711 a/µ law G.729 a/b ab Echo Cancellation G168 line echo cancellation VoIP Enhanced features VAD (Voice Activity Detection) CNG (Comfort Noise Generation) Dynamic jitter buffer VoIP Protocols SIP (RFC 3261) SDP RTP/RTCP Network Protocol IPv4 TCP UDP ICMP RARP ARP DNS DHCP CLIENT HTTP TFTP IP SSH

Low cost PC for industrial automation

Nanostructured materials for industrial applications

What is nanotechnology? Research and production in the nanometer scale Application to several fields: medicine, electronics, physics, chemistry, biology, and materials engineering. It aims at building new structures and materials through atomic manipulation. Example in microelectronics: Intel 2 2

Current projects 1. New materials for photocatalysis and hydrogen production. With U. College London (UK). 1. Transport properties of charge carriers in nano-soi (silicon-on-insulator). With U. Tokyo (Japan). 2. Properties of carbon-based materials for future transistors. With CEA/LETI (France - awarded 3 year funding by the French government). 3. Electronic and transport properties of carbon-based materials. With Namitec (Brazil awarded 3+2 year funding by CNPq) 4. Nanostructured materials for solar cells. With U. Connecticut (USA). 5. Surface and interface oxidation. With Freescale (USA). 6. New methods for simulations. With USP (Brazil). Industrial experience in industrial R&D More than 50 papers published in refereed international journals Authorship in large scale SW for research Expertise in various fields of materials science

New materials for photocatalysis and hydrogen production Estrutura cristalina do composto Ti3 δo4n

Metal/dielectric interfaces L.R.C. Fonseca, A.L. Xavier, M. Ribeiro Jr., C. Driemeier, and I.J.R. Baumvol, Hydrogen trapping in oxygen-deficient hafnium silicates, J. Appl. Phys. (2007). Pt/HfO 2 model interface for SiO 2 and poly-si replacement in ultra-scaled transistors. Dark blue: Pt; Light blue: Hf; Red: O.

Semiconductor/dielectric interfaces L.R.C. Fonseca, D. Liu, and J. Robertson, P-type Fermi level pinning at a Si:Al2O3 model interface, Appl. Phys. Lett. (2008). Si/Al 2 O 3 interface model, also for SiO 2 and poly-si replacement in ultra-scaled transistors. Pink: Al; Orange: Si; Red: O; White: H.

Quantum transport in nano-structures M. Ribeiro Jr., L. R. C. Fonseca, Ab-initio calculations of transport in ultra-thin SOI transistors: the impact of Pb centers and hydrogen passivation on electron and hole transport, to be published. G. Giorgi, L. R. C. Fonseca, A. Korkin, and K. Yamashita, Impact of the crystal structure of HfO 2 on the transport properties of model HfO 2 /Si/HfO 2 siliconon-insulator field effect transistors: a combined DFT-scattering theory approach, Phys. Rev. B 79, 235308 (2009). Silicon on insulator (SOI) offers an excellent opportunity for nanoelectronics. Here a typical interface defect (circle) is shown. Red: O; Orange: Si; White: H.

Nano-wires for sun light conversion to electricity Model CdSe/CdTe coaxial nano-wire. Light conversion can be much higher than in tradition Si-based solar panels. Red: Te; Orange: Cd; Green: Se.

New methods for interface energy band alignment calculation Accurate interface band alignment calculation is key for the development of applications that involve interfaces. Current methods miss the experimental alignment by a factor of two, or obtain the correct value at an impractical computational cost. Our method offers accuracy at a low cost. Right: model SiO 2 /Si interface for testing the method. M.R. Jr, L.R.C. Fonseca, and L.G. Ferreira, Accurate prediction of interface band offset using the self-consistent ab initio DFT/LDA-1/2 method, Phys. Rev. B 79, 241312(R) (2009).

Recent publications: 1. M.R. Jr, L.R.C. Fonseca, and L.G. Ferreira, Accurate prediction of interface band offset using the self-consistent ab initio DFT/LDA-1/2 method, Phys. Rev. B 79, 241312(R) (2009). 2. G. Giorgi, L.R.C. Fonseca, A. Korkin, and K. Yamashita, Impact of the crystal structure of HfO2 on the transport properties of model HfO2/Si/HfO2 silicon-on-insulator field effect transistors: a combined DFT-scattering theory approach, Phys. Rev. B 79, 235308 (2009). 3. L.R.C. Fonseca, D. Liu, and J. Robertson, P-type Fermi level pinning at a Si:Al2O3 model interface, Appl. Phys. Lett. 93, 1 (2008). 4. L.R.C. Fonseca, PY. Prodhomme, and P. Blaise, Bridging electrical and structural interface properties: a combined DFT- GW approach, JICS 2, 94 (2007). 5. L.R.C. Fonseca, A.L. Xavier, M. Ribeiro Jr, C. Driemeier, and I.J.R. Baumvol, "Hydrogen trapping in oxygen-deficient hafnium silicates, J. Appl. Phys. 102, 044108 (2007). 6. K. Ravichandran, W. Windl, and L.R.C. Fonseca, New understanding of contact structure formation in carbon nanotube electronic devices, to appear. 7. C. Capasso, R. Gregory, D. Gilmer, L.R.C. Fonseca, M. Raymond, C. Happ, M. Kottke, S. Samavedam, P. Tobin, and B. White, Tantalum carbo-nitride electrodes and the impact of interface chemistry on high permittivity MOSFET device characteristics, J. Appl. Phys. 101, 14503 (2007). 8. A.V. Gavrikov, A.A. Knizhnik, A.A. Bagatur yants, B.V. Potapkin, L.R.C. Fonseca, M.W. Stoker, and J. Schaeffer, Oxidation of the Pt/HfO2 interface: the role of the oxygen chemical potential, J. Appl. Phys. 101, 14310 (2007). 9. J.K. Schaeffer, L.R.C. Fonseca, S.B. Samavedam, Y. Liang, P.J. Tobin, and B.E. White, Contributions to the effective work function of platinum on hafnium dioxide, Appl. Phys. Lett. 85, 1826 (2006). 10. L.R.C. Fonseca and A.A. Knizhnik, First principles calculation of the TiN effective work function on SiO2 and on HfO2, Phys. Rev. B 74, 195304 (2006). 11. A.A. Knizhnik, A.A. Safonov, I.M. Iskandarova, A.A. Bagatur yants, B.V. Potapkin, L.R.C. Fonseca, and M.W. Stoker, Segregation trends of the metal alloys Mo-Re and Mo-Pt on HfO2: a first-principles study, J. Appl. Phys. 100, 13506 (2006). 12. A.A. Knizhnik, A.A. Safonov, I.M. Iskandarova, A.A. Bagatur yants, B.V. Potapkin, L.R.C. Fonseca, and M.W. Stoker, Firstprinciple investigation of the WC/HfO2 interface properties, J. Appl. Phys. 99, 84104 (2006).

Summary The Wernher von Braun Center is a Brazilian, non-profit private institution. The Center has over 10 years experience in addressing industry needs. We develop innovative engineering solutions for public and privated companies in the areas of Automation, Machine Vision, RFID, Microelectronics, and IT. Innovative projects are firmly based on fundamental research, which undergo into products, technologies and services. Von Braun s mission is to explore new frontiers in science creating practical applications and opportunities.